发明名称 Process, supply, temperature compensating CMOS output buffer
摘要 A design for a high performance CMOS output buffers utilizing a process, supply and temperature conpensated current source to achieve very tight distribution of rise/fall times and propagation delays. The output buffer has been optimized to limit switching noise by using current controlled predrivers. An output buffer according to the present invention can switch up to a 100 pf load to TTL levels with rise times of no more than 4.0 ns and propagation delays ranging from 2.1 ns to 11.6 ns over the entire range of process, supply, temperature, and load for a typical one micron CMOS process; Vcc from 4.5 to 5,5V, temperature from -10 to 120 DEG C., and loads from 10 to 100 pf.
申请公布号 US5021684(A) 申请公布日期 1991.06.04
申请号 US19890434021 申请日期 1989.11.09
申请人 INTEL CORPORATION 发明人 AHUJA, BHUPENDRA;SOLLARS, DONALD
分类号 H03K19/003;H03K17/14;H03K17/16;H03K17/687;H03K19/0175;H03K19/0185 主分类号 H03K19/003
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