| 摘要 |
PURPOSE:To ensure the mutual insulation of semiconductor elements, and to dissipate heat generated from the semiconductor elements excellently by forming silicon chips, on surfaces of which conductive layers are shaped while interposing insulating layers, among a heat sink and the semiconductor elements respectively. CONSTITUTION:Power semiconductor elements 15a, 15b are formed onto silicon chips 13a, 13b while interposing conductive pastes 14a, 14b. That is, the collectors of the semiconductor elements 15a, 15b are connected to the conductors 13e of the silicon chips 13a, 13b through the conductive paste 14a, 14b. Wires 16a-16d are bonded with the semiconductor elements 15a, 15b and the conductors 13e of the silicon chips 13a, 13b. Accordingly, the semiconductor elements 15a, 15b can be insulated positively by use of the silicon chips 13a, 13b while heat generated from the semiconductor elements 15a, 15b can be conducted through a heat sink 11 through the silicon chips 13a, 13b. |
