发明名称 |
Gate turn-off thyristor |
摘要 |
A gate turn-off thyristor includes a cathode emitter of n-type, a cathode base of p-type, an anode base of n-type and an anode emitter of p-type. A gate electrode is electrically connected to the p cathode base to enclose and define an elemental gate turn-off thyristor region. A plurality of n cathode emitter regions are arranged in proximity to each other in the elemental gate turn-off thyristor region. A highly-doped buried gate region is provided in the p cathode base with the substantially identical configuration for each n cathode emitter regions. |
申请公布号 |
US5021855(A) |
申请公布日期 |
1991.06.04 |
申请号 |
US19890326455 |
申请日期 |
1989.03.20 |
申请人 |
HITACHI, LTD. |
发明人 |
OIKAWA, SABURO;YATSUO, TSUTOMU;SATOU, YUKIMASA |
分类号 |
H01L23/482;H01L29/10;H01L29/423;H01L29/74;H01L29/744 |
主分类号 |
H01L23/482 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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