Test signal generator for semiconductor integrated circuit memory and testing method thereof

摘要

A test signal generator for a semiconductor integrated circuit memory, wherein when transfer transistors (20, 21, 14, 15) are rendered conductive, a test data cloumn is supplied from an I/O line pair (11, 12) to a column of a register (10) and stored therein. When a transfer (67) is rendered conductive, the test data column written in the register is written in a column of a memory cell (22) in the same pattern and when transfer transistors (16, 17) are rendered conductive, the test data column written in the register is inverted and the, written in the memory cell column, Data in the memory cell column is read out by a word line (13) and amplified by a sense amplifier (5), so that the data and the test data stored in the register are compared by a coincidence detection circuit 8 to detect whether it is coincident or not.