BORON NITRIDE FILM IN WAFER STRUCTURE

摘要

PURPOSE: To make efficient the mechanical function of a mechanical device by a lamination structure that is constituted of a wafer member with a film made of boron nitride that has a nominal composition of B3 N and essentially does not contain hydrogen as an accessory film. CONSTITUTION: A lamination structure 10 is constituted of a wafer member 14 and a film 12 that is adhered to it. The film 12 is formed by boron nitride that has much boron content with a nominal molecular composition of B3 N and essentially does not contain hydrogen and is formed on the wafer member 14 made of silicon single crystal preferably by the low-pressure chemical steam deposition method. Also, a middle layer 16 may be provided between the film 12 and the wafer 14 and is silicon dioxide or a substance obtained by modifying a film substance. With this kind of lamination structure, the mechanical function of a mechanical device can be made efficient.