发明名称 |
Method for making a field effect transistor integrated with an opto-electronic device |
摘要 |
In a monolithic OEIC in which an FET and a light-emitting device are integrated, the light-emitting device has a first clad layer, an active layer, and a second clad layer stacked on a substrate, the FET has a channel layer and source and drain layers with a high impurity concentration stacked on the substrate, etching mask layers on the source and drain layers, and a gate electrode formed on a channel layer between source and drain electrodes and the source and drain layers, the first clad layer of the light-emitting diode and the source and drain layers with a high impurity concentration of the FET are formed of the same semiconductor layer, and an active layer of the light-emitting device and the etching mask layers of the FET are formed of the same semiconductor layer.
|
申请公布号 |
US5021361(A) |
申请公布日期 |
1991.06.04 |
申请号 |
US19890449441 |
申请日期 |
1989.12.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KINOSHITA, JUN'ICHI;SUZUKI, NOBUO;MORINAGA, MOTOYASU;HIRAYAMA, YUZO;NAKAMURA, MASARU |
分类号 |
H01L21/306;H01L21/8252;H01L27/15;H01L29/812;H01L33/00;H01S5/02;H01S5/026;H01S5/042;H01S5/062;H01S5/20;H01S5/323 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|