Method of forming microcrystalline silicon-containing silicon carbide film

摘要

A microcrystalline silicon-containing silicon carbide semiconductor film has an optical energy gap of not less than 2.0 eV, and a dark electric conductivity of less than 10-6Scm-1. The Raman scattering light of the microcrystalline silicon-containing silicon carbide semiconductor film, which shows the presence of silicon crystal phase, has a peak in the vicinity of 530 cm-1. This microcrystalline silicon-containing silicon carbide semiconductor film is formed on a substrate by preparing a mixture gas having a hydrogen dilution rate gamma , which is the ratio of the partial pressure of hydrogen gas to the sum of the partial pressure of a silicon-containing gas and the partial pressure of a carbon-containing gas, of 30, transmitting microwave of a frequency of not less than 100 MHz into the mixture gas near a substrate with an electric power density of not less than 4.4x10-2, and generating plasma at a temperature of the substrate of not less than 200 DEG C. and under a gas pressure of not less than 10-2 Torr.