发明名称 |
Silicon avalanche photodiode array |
摘要 |
A wafer of neutron transmutation doped silicon having a pn junction between extended opposite surfaces is formed with bevelled edges. A plurality of reverse biased signal contacts is disposed on one surface to provide an integrated array of avalanche photodiodes.
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申请公布号 |
US5021854(A) |
申请公布日期 |
1991.06.04 |
申请号 |
US19900500230 |
申请日期 |
1990.03.26 |
申请人 |
XSIRIUS PHOTONICS, INC. |
发明人 |
HUTH, GERALD C. |
分类号 |
H01J31/26;H01J31/50;H01L21/261;H01L27/144;H01L27/146;H01L31/02;H01L31/0288;H01L31/0352;H01L31/107 |
主分类号 |
H01J31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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