| 摘要 |
PURPOSE:To reduce a lattice defect in a junction region inside a semiconductor substrate and to reduce a junction leak by a method wherein ions of prescribed high- concentration impurities are implanted into a conductive film formed on a prescribed region including a region to be used as a junction and, after that, a heat treatment is executed in order to diffuse them into the semiconductor substrate. CONSTITUTION:An isolation region 210 is formed in a silicon substrate 200 of a P-type plane (110); then, ions are implanted by making use of a gate electrode 221 and an upper-part insulating film 225 formed on a gate oxide film 220 as a mask; a low- concentration source-drain region 226 is formed. Then, sidewalls 227 of a CVD silicon oxide film are formed on sidewalls of the gate electrode 221; after that, a conductive film 230 of a silicon film, a high-melting metal silicide or the like is formed in a prescribed region of a high-concentration source-drain region 228; ions of arsenic are implanted into a prescribed region of the conductive film 230. At this time, ions of boron are implanted into a formation region of a p<+> type diffusion layer. After that, an insulating film 235 of a silicon oxide film or the like is formed; a heat treatment is executed in an atmosphere of nitrogen for a prescribed time; the arsenic in the conductive film 230 is diffused into the silicon substrate 200; then the shallow high-concentration region 228 can be formed. |
