发明名称 HERMETICALLY SEALED SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To suppress an external pore and an internal pore which are produced in a part of a bonding member by a method wherein, an interconnection part used to interconnect a bonding part of a semiconductor chip to the outside is formed in at least one bonding face of a base body and a lid body before the face is bonded by using the bonding member. CONSTITUTION:For example, ceramic substrates 1 and 2 of a previously warped shape are prepared. The, individual concave faces of the ceramic substrates 1 and 2 are coated with low-melting glasses 3 and 4. Then, a lead frame is placed on the low-melting glass 4 on the substrate 2; the substrate 2 is heated; the lead frame is bonded onto the low-melting glass 4. Then, a semiconductor chip 5 is fixed and bonded, by using a thermoset mounting agent, to a region used to fix and bond the semiconductor chip on the concave face of the ceramic substrate 2. Then, the lead frame and the semiconductor chip are connected electrically by wires by executing a wire bonding operation. Then, as a bonding process, the ceramic substrate 1 and the ceramic substrate 2 are faced in directions to cause a space by their circular arcs; they are heated.</p>
申请公布号 JPH03129756(A) 申请公布日期 1991.06.03
申请号 JP19900187753 申请日期 1990.07.16
申请人 TOSHIBA CORP 发明人 YABANETA MASAMITSU;TOZAWA CHIKASUMI;TSUSHIMA TOSHIKI
分类号 H01L23/02;H01L21/58;H01L23/10;H01L23/13 主分类号 H01L23/02
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