| 摘要 |
PURPOSE:To enhance a resistant amount to a temperature cycle by a method wherein a wiring of at least one part out of uppermost-layer wiring formed on a silicon substrate, e.g. an extraction line, is connected to a lower-layer dummy wiring via a through hole formed in an interlayer film under the wiring. CONSTITUTION:The whole of an lead wire 3, a power-supply wiring 4a and a GND wiring 4b as a peripheral part of a bonding pad 1 and as other upper- layer wiring layers and a second interlayer film 12 are covered with a passivation film 13 of a silicon nitride or a phosphosilicate glass. A deformation of a bonding ball 9 is transmitted to the lead wire 3. Since a dummy wiring is connected to the lead wire 3 via a through hole 8 in a halfway part, the through hole 8 and the dummy wiring 7 act as an anchor and stop that the deformation of the lead wire 3 is spread further. Consequently, a contact 6 and an input wiring 5 which exist at its front are not damaged. |
