| 摘要 |
PURPOSE:To enable a pattern to be micronized and densfied by a method wherein a groove section used for forming a capacitive section is formed of a single groove which traverses a capacitive region connected to the transistor sections of a cell array block section and an insulating film region which separates the capacitive region from the transistor sections. CONSTITUTION:A groove 2 used for a groove type capacitive section is formed traversing capacitive regions 7 connected to the transistor sections of a cell array block section and insulating film regions 3 which separates the capacitive region 7 from the transistor sections through the length of the cell array block. By this setup, a semiconductor memory device of this design can be lessened in positional deviation, restrained from decreasing in charge storage due to the reduction of the groove 2 in area attendant on high integration and reduction, obtain an operation margin of a circuit, and micronized and densified. |
