SMEAR NOISE LIMITER FOR IMAGE SENSER

摘要

Charge coupled device image sensor for decreasing the smear noise and improving the quantum effect is manufactured by forming a photodiode (D) and buried channel (E) on silicon substrate; forming a colour filter (M) on metal layer (M) deposited on poly-silicon (J). Polycide is formed by annealing a Ti or W mletal sputtered on poly-silicon (G). Photo accepting part of colour filter is composed of convex lens (N). This has an advantage of decreasing time delay.