| 摘要 |
<p>A method of depositing thin films of silicon based compounds, particularly silicon dioxide, by cathode reactive sputtering utilizes a rotating cylindrical magnetron (20) driven by a d.c. potential (30). The result is a technique of forming a uniform film on large substrates (12) with high deposition rates. Arcing normally associated with sputtering troublesome dielectric coatings such as silicon oxides is substantially eliminated.</p> |
