发明名称 |
PRODUCTION OF DISPLAY ELECTRODE SUBSTRATE |
摘要 |
<p>PURPOSE:To improve an opening rate by forming insulating films for covering respective bus lines, then forming the patterns of picture element electrodes by the self-alignment with the respective bus lines as a mask. CONSTITUTION:The protective insulating films 30 which cover the surfaces of the gate bus lines 22 and source bus lines 23 on thin-film transistors (TFT) 25 are formed. Further, a transparent conductive film consisting of ITO is deposited thereon and is patterned, by which the picture element electrodes 24 are formed. The patterning of the picture element electrodes 24 is executed by the self-alignment to expose the insulating substrate 21 from the rear surface side with the already formed gate bus lines 22 and source bus lines 23 as a mask. The opening rate is improved in this way.</p> |
申请公布号 |
JPH03127030(A) |
申请公布日期 |
1991.05.30 |
申请号 |
JP19890267234 |
申请日期 |
1989.10.13 |
申请人 |
SHARP CORP |
发明人 |
KANBE TAKASHI;SEKI ATSUO;MOMOSE HIDEHIKO;NAGATOMI HISATO;KONDO YOICHI;SHIROGISHI SHINGO |
分类号 |
G02F1/1343;G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L29/78;H01L29/786 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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