| 摘要 |
<p>PURPOSE:To enable a high in-phase noise signal abating ratio to be shown while restraining the decline in sensitivity by a method wherein the position of an isolating band to isolate the photodetectors not shielded from the shielded photodetectors is specified. CONSTITUTION:Four each of photodetectors 12a-12d not shielded by a semiconductor substrate 10 as well as four each of shielded photodetectors 13a-13d are point-symmetrically arranged so that the light from a light emitting element may be evenly detected. Furthermore, an amplifying circuit 14 is provided to amplification-compare the output signals from the not-shielded photodetectors 12a-12d with those from the shielded photodetectors 13a-13d. Accordingly, the decrease in the sum of photocurrent can be reduced thereby enabling the decline in sensitivity to be restrained. Through these procedures, the title optical coupling semiconductor device with photodetectors in high in-phase noise signal abating ratio and less decline in sensitivity can be manufactured.</p> |
