| 摘要 |
<p>The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.</p> |
