METHOD OF FORMING AMORPHOUS SILICON FILM

摘要

PCT No. PCT/JP83/00411 Sec. 371 Date Jul. 6, 1984 Sec. 102(e) Date Jul. 6, 1984 PCT Filed Nov. 15, 1983 PCT Pub. No. WO84/02035 PCT Pub. Date May 24, 1984.A formation process of an amorphous silicon film, which process comprises subjecting a higher silane containing at least two silicon atoms to photochemical decomposition under radiation of a light having a wavelength of 300 nm or shorter so as to cause amorphous silicon to deposit on a substrate.