发明名称 PRODUCTION OF SINTERED ALUMINUM NITRIDE
摘要 PURPOSE:To obtain sintered AlN capable of being easily metallized and having high heat conductivity with a small number of production stages by calcining a formed AlN in an aluminum vessel filled with an N2 atmosphere. CONSTITUTION:A formed AlN is placed in an aluminum vessel and calcined in an N2 atmosphere. As a result, the sintered AlN is obtained, and simultaneously the O2 generated by the partial decomposition of the Al2O3 constituting the vessel reacts with the Al in the formed AlN to form an Al2O3 film on the surface of the sintered AlN. The cross section of the surface part of the film is shown in the copy of the microphotograph, and the film is formed to a depth of ten-odd mum from the surface. Accordingly, when the surface of the sintered AlN is polished, a part of the accicular Al2O3 is released from the surface of the sintered AlN and an open cell is formed on the surface. Consequently, the wettability of a metal with the sintered AlN is improved by the formation of oxide film.
申请公布号 JPH03126673(A) 申请公布日期 1991.05.29
申请号 JP19890265776 申请日期 1989.10.12
申请人 FUJITSU LTD 发明人 MAKIHARA HIROSHI;UDAGAWA ETSURO
分类号 C04B35/581;C04B35/58 主分类号 C04B35/581
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