发明名称 Bandgap reference voltage circuit.
摘要 <p>In a CMOS bandgap reference circuit (100), the respective collectors of two lateral parasitic NPN transistors (106, 108) are connected to the two nodes of a current mirror (110). The emitter circuit of the first parasitic NPN transistor (106) includes a resistor (116), whereby the base-emitter junction current densities of the parasitic NPN transistors (106, 108) are maintained at a preselected ratio. A second resistor (118) common to the emitter circuit of both parasitic NPN transistors (106, 108) is provided, whereby the difference in base-emitter potentials between the first and second transistors has a positive temperature coefficient and the base-emitter voltage of the second parasitic NPN transistor (108) has a negative temperature coefficient so as to cancel out the above positive coefficient. The temperature independent volatage across the common resistor (118) and the base-emitter junction of the second transistor (108) is buffered by a unity gain amplifier (120). The output of the unity gain amplifier (120) is used to drive the parasitic NPN transistors (106, 108) and also comprises the reference voltage.</p>
申请公布号 EP0429198(A2) 申请公布日期 1991.05.29
申请号 EP19900311906 申请日期 1990.10.30
申请人 SAMSUNG SEMICONDUCTOR, INC. 发明人 TUN-JEN CHENG, FRED
分类号 H01F27/04;G05F3/30;H01L21/822;H01L21/8249;H01L27/04;H01L27/06 主分类号 H01F27/04
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