METHOD OF PRODUCING SEMICONDUCTOR DEVICES.

摘要

A method of introducing impurities into polycrystalline silicon formed on an insulating film. An As-containing silicate glass layer (13) is formed on a polycrystalline silicon layer (12) formed on an insulating film (2) followed by the heat treatment, in order to introduce arsenic into the polycrystalline silicon layer (12). The silicate glass layer (13) has an arsenic concentration of greater than 25 % by weight in terms of As2O3, and the heat treatment is carried out in a mixture gas atmosphere of N2 and O2 having an oxygen partial pressure ratio of 0.05 to 0.7 at 1000 DEG C or higher for 60 minutes or longer.