发明名称 Charge transfer device
摘要 In a charge transfer device including spaced apart channels on a semiconductor substrate, first electrodes are disposed in gaps between the channels, second electrodes are disposed opposite alternate channels overlapping the adjacent first electrodes, and a third continuous electrode overlies the alternating channels and first and second electrodes in the charge transfer direction. A first clock phase is obtained by connecting alternate first electrodes with the adjacent second electrode in the direction of charge transfer, and a second clock phase is obtained by connecting the remaining first electrodes with the third electrode. The portion of the first electrode overlapped by the second electrode in the second clock phase is larger than that in the first clock phase for stable driving by first and second clock signals out of phase by 180 DEG and generated by a driver including a resonance circuit.
申请公布号 US5019884(A) 申请公布日期 1991.05.28
申请号 US19900479271 申请日期 1990.02.13
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YAMAWAKI, MASAO
分类号 G11C19/28;G11C27/04;H01L21/339;H01L29/762;H01L29/768;H04N1/028;H04N5/335;H04N5/341;H04N5/372;H04N5/376 主分类号 G11C19/28
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