发明名称 Process for selectively growing thin metallic film of copper or gold
摘要 A process for growing a thin metallic film of gold or copper selectively on a predetermined area of a substrate. An organic complex or organometallic compound of gold or copper as a starting material is heated to evaporate the same, while a substrate having on the surface thereof a metal or a metallic silicide as a first material and an oxide or a nitride as a second material is heated at a temperature equal to or higher than the decomposition temperature, on the first material, of a vapor of the starting material. The vapor of the evaporated starting material is fed together with a reducing gas onto the heated substrate to selectively grow a thin metallic film of gold or copper only on the surface of the first material.
申请公布号 US5019531(A) 申请公布日期 1991.05.28
申请号 US19890354158 申请日期 1989.05.19
申请人 NIPPON TELEGRAPH AND TELEPHONE CORPORATION 发明人 AWAYA, NOBUYOSHI;ARITA, YOSHINOBU
分类号 C23C16/18;H01L21/285;H01L21/3205;H01L21/768;H01L23/532 主分类号 C23C16/18
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