发明名称 |
Process for selectively growing thin metallic film of copper or gold |
摘要 |
A process for growing a thin metallic film of gold or copper selectively on a predetermined area of a substrate. An organic complex or organometallic compound of gold or copper as a starting material is heated to evaporate the same, while a substrate having on the surface thereof a metal or a metallic silicide as a first material and an oxide or a nitride as a second material is heated at a temperature equal to or higher than the decomposition temperature, on the first material, of a vapor of the starting material. The vapor of the evaporated starting material is fed together with a reducing gas onto the heated substrate to selectively grow a thin metallic film of gold or copper only on the surface of the first material.
|
申请公布号 |
US5019531(A) |
申请公布日期 |
1991.05.28 |
申请号 |
US19890354158 |
申请日期 |
1989.05.19 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
AWAYA, NOBUYOSHI;ARITA, YOSHINOBU |
分类号 |
C23C16/18;H01L21/285;H01L21/3205;H01L21/768;H01L23/532 |
主分类号 |
C23C16/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|