| 摘要 |
A bipolar/CMOS ECL-to-CMOS conversion circuit for receiving ECL differential input signals and for converting the ECL input signals to CMOS complementary output signals, includes, a first output stage (20), a second output signal (22), a first base drive circuit (24), a second base drive circuit (26), a third base drive circuit (28), and a fourth base drive circuit (30). The first and second output stages are formed of bipolar transistors, and the first through fourth base drive circuits ar formed of CMOS transistors. The bipolar transistors and CMOS transistors are merged in a common semiconductor substrate in order to form the conversion circuit which has high current drive capabilities and low propagation delay regardless of variations in temperature and process corners.
|
