| 摘要 |
A field effect transistor for microwave and millimeter wave frequencies includes a plurality of feeding points on a gate finger extending on a substrate, an airbridge wiring structure which connects adjacent feeding points with each other, and a gate pad beyond the source and drain electrodes connected with the gate finger through the airbridge. The relatively wide gate connection reduces gate resistance. The gate connection does not cross the source and drain electrodes, reducing capacitance. The reduced resistance and capacitance significantly improve the high frequency noise figure.
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