发明名称 PRODUCTION OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To prevent the chipping generated after application of photosensitive polyimide from being transferred onto underlying 1st, 2nd CVD films by applying the 1st photosensitive polyimide on the surface of a semiconductor device and drying the coating, then applying the 2nd photosensitive polyimide thereon so as to be thicker than the 1st photosensitive polyimide and drying the coating. CONSTITUTION:The 1st photosensitive polyimide 5a is applied relatively thinly on the surface of the semiconductor device 2 formed on a semiconductor substrate 1 and thereafter, the 2nd photosensitive polyimide 5b is thickly applied thereon. Then, even if the 1st photosensitive polyimide film is chipped, the chipping is filled with the 2nd photosensitive polyimide film and the probability that the chipping is generated in the same position of the 1st and 2nd photosensitive polyimide films is extremely lessened. The generation of the chipping is thus prevented and the transfer of the defects to th 1st, 2nd CVD films is prevented.
申请公布号 JPH03125154(A) 申请公布日期 1991.05.28
申请号 JP19890262917 申请日期 1989.10.11
申请人 OKI ELECTRIC IND CO LTD 发明人 OTA MASAE;UTSUKI TOMOKATSU;OCHIAI JUNICHI
分类号 G03F7/095;G03F7/26;H01L21/027;H01L21/30 主分类号 G03F7/095
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