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发明名称
ANNEALING METHOD FOR GAAS SEMICONDUCTOR
摘要
申请公布号
JPH03125432(A)
申请公布日期
1991.05.28
申请号
JP19890262978
申请日期
1989.10.11
申请人
HITACHI ELECTRON ENG CO LTD
发明人
OYAMA KATSUMI
分类号
H01L21/324;H01L21/265
主分类号
H01L21/324
代理机构
代理人
主权项
地址
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