| 摘要 |
PURPOSE:To form a conductive passage without being influenced by a surface state and a film thickness of an a-Si layer by a method wherein a laser beam is irradiated through an insulating transparent substrate and the conductive passage which connects individual electricity-generating areas is formed. CONSTITUTION:A transparent electrode layer 2 (21 to 23), an a-Si layer 3 and a conductive printed electrode layer 4 (41 to 43) are laminated on a glass substrate 1; the conductive printed electrode layer 4 (41 to 43) is formed in such a way that one part is overlapped with the adjacent transparent electrode layer 2 via the a-Si layer 3. Then, a laser beam is irradiated from the side of the glass substrate 1 of overlapped parts of both electrode layers; a conductive passage 5 (51, 52) composed of an alloy layer 6 obtained after the transparent electrode layer 2 in individual electricity-generating areas, the a-Si layer 3 and the conductive printed electrode layer 4 in adjacent electricity-generating areas have been heated and melted is formed. When the laser beam is irradiated through the glass substrate 1 in this manner, the conductive passage 5 (51, 52) can be formed without being influenced by a surface state and a film thickness of the a-Si layer 3. |
