| 摘要 |
PURPOSE:To sharply increase a photoelectric conversion element in optical transitional probability so as to enhance it in light absorption coefficient and light emitting efficiency by a method wherein thin film well layers of single crystal or polycrystalline silicon and thin film barrier layers are alternately laminated to form a superlattice multilayered film, which is provided to the element. CONSTITUTION:Thin film well layers 12a and thin film barrier layers 12b whose material is different from that of the layers 12a are alternately laminated to form a superlattice multilayered film, which is provided to a photoelectric conversion element, where the well layer 12a is formed of single crystal silicon or polycrystalline silicon and the barrier layer 12b is formed of CaF2, GaP, AlP, or ZnS. The wall layer 12a is made as thin as prescribed, whereby it functions so as to make its energy level quantized. The barrier layer 12b functions so as to induce a tunnel effect when both the well layer 12a and the barrier layer 12b are made as thin as prescribed. By this setup, a well layer of single crystal or polycrystalline silicon has a direct, optical transition. Therefore, a photodetective element excellent in absorption to light in a range of infrared ray can be realized. |
