| 摘要 |
PURPOSE:To enhance durability and measuring accuracy by forming a through- hole to a substrate having a specific crystal surface on the basis of a semiconductor process and mounting the field effect transistor formed on the same crystal surface as the substrate in the through-hole. CONSTITUTION:Two masks A, B for a substrate 1 are prepared corresponding to the size of a semiconductor ion sensor (ISFET). A scribed Si-wafer is oxidized (SiO2 and a resist (n) is applied thereto and baked. After the rear of the Si-wafer is exposed and developed using the mask B, an Si-layer is etched in such a state that Si of the (100) surface of a crystal structure has a cross-section of an angle of inclination of about 55 deg. and an SiO2 layer is subsequently removed. Further, the Si-wafer is etched using the mask A to prepare a flow cell substrate 1 wherein the opening of the surface thereof is extremely small and the opening of the rear thereof becomes extremely large. An SIFET 4a having the same crystal surface is brought into contact with the rear of the substrate 1 so that a gate 5a can be viewed from a gate window 2a and fixed thereto by an adhesive 6. |
