| 摘要 |
<p>PURPOSE:To realize high integrity by forming self-aligning contact holes for base electrodes of a PROM which has emitter-follower type polycrystal Si fuses. CONSTITUTION:An n+ buried layer 12 is formed in a P<-> type Si substrate 11 and an n type epitaxial layer 13 is made grow on the buried layer 12 and B is diffused or implanted by ino-implantation. After a p type base region 15 is formed by above method, field oxide film 14 is formed by selective oxidization and n<+> type polycrystal line Si doped by As is formed on the whole surface. Then the polycrystalline Si is patterned to form fuses 171 and 172, an n<+> type emitter 19 is formed by solid phase diffusion, oxide films 201 and 202 are formed an the surface, thin oxide film over the base region is selectively removed and base wiring 23 is formed. With this constitution, self-aligning contact holes for the base can be formed, so that the high integrity can be obtained and high speed device can be obtained because the stray capacity is reduced.</p> |
