| 摘要 |
Grooves are hollowed out at the surface of a semiconductor by means of an etching operation performed in an electrolyte bath 2, those portions of the semiconductor 1 which correspond to the grooves being illuminated by the collimated light 3, the rays of which are virtually perpendicular to the surface of the semiconductor. According to the invention, the material 1 is electrically biased (4, 5, 6, 7) so as to be photoelectrolytically etched. In the case in which the semiconductor 1 is made of gallium arsenide, the electrolyte 2 is advantageously hydrochloric acid, HCl, or hydrobromic acid, HBr. This electrolyte preferably contains an oxidising-agent/solvent, especially a hypochlorite and/or a chlorine solution. Application: etching of cut-out tracks in semiconductor wafers. <IMAGE>
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