| 摘要 |
PURPOSE:To make it possible to use one groove in common for the capacitor parts in two memory cells and to make it possible to make small the occupation areas of the capacitor parts in the memory cells by a method wherein a first-layer conductor film in the groove is divided and a capacitor insulating film and a second-layer buried conductor film are formed on the divided first-layer conductor films. CONSTITUTION:A semiconductor device comprises a structure, in which a groove 15 is formed in a semiconductor substrate 1 and after a first-layer conductor film which is used as an electrode is formed in the groove 15, the first-layer conductor film is divided in the groove 15, and is formed into one that a capacitor film 23 is formed on the first-layer conductor films 20 and 21 and a second-layer conductor film 24 which is used as an opposed electrode is formed. For example, a groove 15 is formed in a semiconductor substrate 1 and after an oxide film 16 and buried contact holes 18 are formed, a first-layer polycrystalline silicon film is formed, phosphorus is diffused and n<+> diffused layers 19 are formed. Then, an anisotropic ethcing is performed to divide the polycrystalline silicon film into two in the groove 15, an oxide film 23 is formed on the capacitor polycrystalline silicon films 20 and 21 divided into two and after polycrystalline silicon is deposited on the whole surface of the substrate 1, a poly-crystalline silicon film 24 of a structure, in which the groove 15 is filled by etching back, is formed. |
