| 摘要 |
<p>PURPOSE:To restrain the diffusion of crack or transposition resulting from dicing by a method wherein a high density impurity area is formed in the prearranged area for separating slot or along the both sides of the slot and a separating slot is cut by means of a dicing blade and the like when a chip is separated from a wafer. CONSTITUTION:An area to be divided into chips is set up in a semiconductor wafer 41 whereon a slot is cut by means of a diamond blade and the like to divide the wafer into chips by bending the said wafer 41. At this time, the impurities are diffused in the prearranged area for separating slot from the wafer surface to form a high density impurity area 51 wherein a slot is cut by means of thrusting a blade at the central part thereof. Otherwise, another high density impurity area 52 is formed at both sides of the separating slot and a blade is pressed on the area surrounded by the areas 52 to cut the slot which is compressed by a roller and the like to divide the slot into individual chips. Through these procedures, the crack and the like resulting from dicing may be absorbed into said high density area to prevent the crack and the like from difusing in the active element area in chips.</p> |
