| 摘要 |
PURPOSE:To flatten interlayer insulating films to be formed under wirings, such as a bit line and the like, to improve a manufacturing margin at the time of the REP of the wirings, such as a bit line and the like, and to obtain a high-yield and high-reliability semiconductor storage device by a method wherein the second interlayer insulating film is formed only on the first interlayer insulating film at a peripheral circuit region and the like. CONSTITUTION:In a memory storage device having a cell array region and a peripheral circuit region, the device is constituted in such a structure as to have a memory cell array which is formed at the cell array region, a peripheral circuit which is formed at the peripheral circuit region, a first interlayer insulating film 11 which is formed on the memory cell array and the peripheral circuit, a second interlayer insulating film 115 which is formed only on the film 111 at the peripheral circuit region, and wirings 113 which are formed on the above films 111 and 115. For example, a second interlayer insulating film 115 consisting of a material different from that of a first interlayer insulating film 111 is formed on the film 111 at a peripheral circuit region and the film thickness of the film 115 is made equal to a step difference between a cell array region on the film 111 and the peripheral circuit region. |
