| 摘要 |
PURPOSE:To realize a blue to ultraviolet light emitting element, etc., of high luminance by joining a p-type cubic system boron nitride crystal to one side of a p-type diamond crystal and by joining an n-type cubic system boron nitride crystal to the other side thereof. CONSTITUTION:A p-type cubic system boron nitride (C-BN) crystal 11 is joined to one side of a p-type diamond crystal 12, and an n-type C-BN crystal 13 is joined to the other side thereof. For example, a p-type diamond layer (B-dope, resistivity of 20OMEGAcm, a thickness of 0.5mum) 12 is made to grow by micro wave plasma CVD method on a high pressure synthetic p-type C-BN substrate (Be dope, resistivity of 5X10<2>OMEGAcm, 1X2mm, a thickness of 500mum) 12. An n-type C-BN layer (Si dope, resistivity of 10OMEGAcm, a thickness of 0.7mum) 13 is formed thereon by activated reactive deposition method. An AuBe electrode 14 is provided on a rear of the p-type C-BN substrate 11 and an AuSi electrode 15 is provided on an upper side of the n-type C-BN layer 13 to constitute a DH junction diode. |
