| 摘要 |
PURPOSE: To eliminate separation of a metal, contamination of a manufacturing device caused by the separation and the disturbance etc. with respect to a process by a method, wherein a protective film is formed on the dielectric layer on a substrate including the surface of a semiconductor device, the dielectric layer on a non-protected region is removed by etching, and a metal layer is formed after the protective layer has been removed and a bonding layer has been formed. CONSTITUTION: In the method of manufacture for an integrated circuit device in which a protective layer 14 is formed on a dielectric layer 11 on a substrate 10, including the surface of a semiconductor device, a protective film 12 is formed on a part of the dielectric layer 11 on the surface of the semiconductor device, the first region, containing the surface of the semiconductor device, is protected by the protective film 12, and the first region forms a component body which does not contain the circumferential region of the surface of the semiconductor device. Then, the component body is exposed to a corrosive liquid, the dielectric layer of the second region, which forms the additional part of the first region is removed. After removal of the protective layer 12, a bonding layer 13 is formed at least on the above- mentioned dielectric layer 11, and a metal layer 14 is formed on the bonding layer 13. The above-mentioned bonding layer 13 is formed by titanium nitride, titanium tungsten, and titanium aluminum etc. |
