| 摘要 |
PURPOSE:To raise a breakdown voltage and decrease a leak current by providing the second groove that is shallower than the first and the second layers and extending from the first layer to the first groove. CONSTITUTION:In manufacture of such as a diode, the first layer 2 and the second layer 3 of a p type diffusion layer are formed at distance at the same time on an n type semiconductor substrate 1. The second groove 6 is made by etching with its end reaching the first layer 2 and wider than the first groove 4 and shallower than the second layer 3. A glass layer 5 is deposited on the first groove 4 and the second groove 6. Defects on the main surface of the semiconductor substrate are removed by etching, raising the breakdown voltage and at the same time decreasing a leak current. |
