FORMING OF SEMICONDUCTOR NITRIDE LAYER

摘要

PURPOSE:To form a relatively thick nitride layer on the surface a semiconductor substrate in a short time, by heat treating a substrate having a semiconductor layer in the non-oxide gas atmosphere containing nitrogen of somewhat high pressure (more than one atmosphere). CONSTITUTION:A thin SiO2 film 2 is formed on the surface of a silicon wafer 1. Then the wafer is exposed to a high temperature and a high pressure (more than one atmosphere) atmosphere containing nitrogen and heat treated to form on the surface of the silicon wafer 1 or between silicon wafer 1 and an SiO2 layer 2 a thick oxi-nitride layer 3 containing a large number of nitrogen atoms. The thick nitride layer is formed easily in a short time by directly nitriding the silicon wafer.