| 摘要 |
PURPOSE:To obtain a resist pattern suitable for a lift-off operation by a small number of processes by a method wherein a solubility, with reference to a developing solution, of an upper-layer part of a single photoresist layer with which a substrate is coated is made slower than that of a lower-layer part. CONSTITUTION:A substrate 1 is coated with a single positive-type photoresist 2; this assembly is immersed in an alkaline solution; a low-solubility part 3 is formed at an upper-layer part; the part is exposed to light and developed; then, a cross-section of the photoresist layer 2 at an opening part is formed as a pattern having an overhang part 6. A desired thin film 7 is deposited; the photoresist 2 is removed by using a solvent; a lift-off operation is executed; then, a pattern of the required thin film 7 is formed on the substrate 1. By this constitution, the pattern of the thin film by the lift-off operation can be formed accurately, fine and with a good yield. A developing solution for a photoresist can be used as the alkaline solution to be used; an apparatus can be simplified and a chemical liquid can be administer simply. |
