| 摘要 |
<p>In a semiconductor integrated circuit wherein a bipolar transistor and an insulated gate type complementary transistor are formed on a single semiconductor chip, the insulated gate type complementary transistor is formed in an island-shaped epitaxial layer (4) which is completely isolated from a semiconductor substrate (1) and the other part of the circuit and which has a conductivity type (N) opposite to that (P) of the semiconductor substrate, and an electrode (176) is formed in contact with a region (62) for isolating the islandshaped epitaxial layer from the other part of the circuit. In the semiconductor integrated circuit, since the CMOS circuit is formed in the island-shaped epitaxial layer isolated completely from the semiconductor substrate and the other part of the circuit, noise occurring in the CMOS circuit does not adversely affect the bipolar circuit. Thus, the operation margin of the semiconductor integrated circuit is increased, and the malfunction of the circuit can be prevented.</p> |
