| 摘要 |
A mask for lithographic patterning comprises a base body (10) provided with a through hole (15, 25) passing from a top side to a bottom side thereof, a mask layer (11, 33) provided on the top side of the base body so as to close the through hole, the mask layer being defined by a substantially flat top surface (111) and a substantially flat bottom surface (112) and having a thickness ranging from about 2 mu m to about 20 mu m, and a plurality of patterned apertures (20 - 25) provided on the mask layer at a part closing the through hole. |
