| 摘要 |
PURPOSE: To impart an amorphous or polycrystalline silicon material with advantageous diode characteristics and/or passivation characteristics by reducing hydrogen-oxyde compound on the surface of the silicon material and generating atomic hydrogens being diffused into the silicon material. CONSTITUTION: Grain boundary and internal grain defect in a silicon material are passivation by saturating these crystal troubles with hydrogen atoms produced by reducing a hydrogen-oxygen compound, e.g. water, on the silicon surface. A hydrogen containing compound where the dissociation energy at a specified temperature is lower than the bonding energy of silicon dioxide is suitably employed. In this case, atomic hydrogen is generated through reduction on the surface of the silicon material and diffused to detective crystal points in the silicon material at a corresponding temperature. For example, a polysilicon wafer is heat treated in an atmosphere containing water. The temperature is preferable set in the range of 250-500 deg.C. Pressure may be increased in order to attain a higher passivation effect. |
