| 摘要 |
<p>PURPOSE:To obtain an EPROM device whose power consumption is low by allowing the device to contain a power switch MOSFET for executing a switch- off control, based on a chip selecting signal. CONSTITUTION:Depletion type insulated gate field effect transistor (MOSFET) Q11, Q12 of a series form bring a power supply voltage Vcc to voltage division by its conductance ratio and form a prescribed intermediate level, and the power supply voltage Vcc is supplied through a (p) channel MOSFET Q13 being a power switch. To a gate of the MOSFET Q13, a chip selecting signal (ce) which becomes a low level in a read-out selecting operation is applied. In such a way, on the circuit for forming the intermediate level, the power switch MOSFET is provided, and only at the time of its operation, a DC current is allowed to flow and a DC current of the whole EPROM device can be reduced. Accordingly, its power consumption can be reduced.</p> |
