| 摘要 |
A process for producing an electrically insulating and protective layer of aluminum oxide on semiconductive, insulating, metallic and superconductive substrates is disclosed, which comprises forming an epitaxial or polycrystalline film of aluminum arsenide on the surface of the substrate, e.g. a gallium arsenide substrate, and exposing the aluminum arsenide coated substrate, e.g. gallium arsenide, to water vapor, e.g. the ambient atmosphere containing water vapor, at a sufficient water vapor pressure and for a period of time sufficient to substantially completely convert the aluminum arsenide to aluminum oxide. |
