摘要 |
<p>In order to be able to produce inexpensively the bond between a glass component and a silicon component in the manufacture of sub-assemblies in the planar-optics and/or micromechanics fields, the use of so-called anodic-bonding techniques calls for the glass component to be conventional flat glass, hardened, before bonding to the silicon component, in a salt bath, thus generating compressive stresses in the surface penetrating to a maximum depth of 20-40 mu m. These compressive stresses compensate for the tensile stresses produced by the bonding process.</p> |
申请人 |
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE |
发明人 |
HOUDEAU, DETLEF, DIPL.-ING.;SCHLAAK, HELMUT, DR.;ZHANG, JUN-MING, DIPL.-ING., 1000 BERLIN, DE |