VERFAHREN UND VORRICHTUNG ZUM HERSTELLEN EINER SILIKATSCHICHT IN EINER INTEGRIERTEN SCHALTUNG

摘要

Described is a process for producing a silicate layer, in particular an intermediate-oxide insulation layer used to equalize surface irregularities in an integrated circuit, by means of the following steps: Polysiloxane is first produced by photo-inductive polymerization in the gas phase, beginning with an SiO-containing or SiC-containing organic compound plus an O2-containing and/or N2O-containing gas at a first temperature and a first pressure in a reaction chamber; the polysiloxane is condensed to give a polysiloxane layer on a surface structure, in particular the circuit structure of an integrated circuit, in a condensation chamber separate from the reaction chamber and at a second temperature lower than the first, the second temperature being high enough for the SiO-containing or SiC-containing organic compound not to condense at a given second pressure in the condensation chamber but higher than the temperature at which the polysiloxane condenses at the second pressure; the polysiloxane layer is then converted into a silicate layer.