| 摘要 |
PURPOSE:To improve patterning precision and restrain the increase of manufacturing cost, by forming an antireflection film by spin coating method which is similarly used in the case of forming a resist film. CONSTITUTION:After an Al film 4 is formed on a substrate to be processed where an insulating film 2 having a contact widow 3 is formed on a semiconductor substrate 1, an antireflection polymer film 5 and a positive resist film 6 are spin-coated, and cured by baking. The positive resist film 6 is subjected to pattern exposure by UV radiation via the transparent region 7A of a photo mask 7. Apertures 9A, 9B for etching are formed in the resist film 6 by fusing optical regions 8A, 8B. The Al film 4 is exposed in the bottom parts of the apertures 9A, 9B, by reactive ion etching(RIE) treatment using the resist film 6 as a mask. The exposed Al film 4 is selectively eliminated by RIE treatment using chlorine system gas like carbon tetracholide as etching gas, and the patterning of the Al film 4 is finished. |
