Microwave semiconductor device.

摘要

A microwave semiconductor device comprises a plurality of active regions of Schottky barrier FET arranged on a single semiconductor substrate (11) in a common gate width direction, and gate electrodes (12) are linearly connected to each other. Side-gate electrodes (15) each formed by an ohmic metal are arranged on the semiconductor substrate (11) between adjacent active regions (11B). In this portion, a gate wiring layer (12B) is arranged so as to cross over each side-gate electrode (15). With this arrangement, a sufficient side gate effect on the entire FET having gate electrodes (12) connected to have a large length, can be obtained, and a threshold voltage can be controlled after manufacturing.