Fabrication method using oxidation to control size of fusible link
摘要
The size of a fusible link (22CF) created from part of a metal layer (22) is controlled by an oxidation performed in a deposition chamber that is also used for depositing a dielectric layer (30) over the fuse structure. The metal layer serves as a diffusion barrier between semiconductor material (14 and 16) and another metal layer (24).
申请公布号
US5015604(A)
申请公布日期
1991.05.14
申请号
US19890395926
申请日期
1989.08.18
申请人
NORTH AMERICAN PHILIPS CORP., SIGNETICS DIVISION
发明人
LIM, SHELDON C. P.;HELLSTROM, JULIE W.;YEN, TING P.