发明名称 Fabrication method using oxidation to control size of fusible link
摘要 The size of a fusible link (22CF) created from part of a metal layer (22) is controlled by an oxidation performed in a deposition chamber that is also used for depositing a dielectric layer (30) over the fuse structure. The metal layer serves as a diffusion barrier between semiconductor material (14 and 16) and another metal layer (24).
申请公布号 US5015604(A) 申请公布日期 1991.05.14
申请号 US19890395926 申请日期 1989.08.18
申请人 NORTH AMERICAN PHILIPS CORP., SIGNETICS DIVISION 发明人 LIM, SHELDON C. P.;HELLSTROM, JULIE W.;YEN, TING P.
分类号 H01L23/525 主分类号 H01L23/525
代理机构 代理人
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